| Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC | |
| Feng Liang; Ping Chen; De-Gang Zhao; De-Sheng Jiang; Zhi-Juan Zhao; Zong-Shun Liu; Jian-Jun Zhu; Jing Yang; Wei Liu; Xiao-Guang He; Xiao-Jing Li; Xiang Li; Shuang-Tao Liu; Hui Yang; Li-Qun Zhang; Jian-Ping Liu; Yuan-Tao Zhang; Guo-Tong Du | |
| 2016 | |
| Source Publication | Chinese Physics B
 |
| Volume | 25Issue:5Pages:057703 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2017-03-10 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27872 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Feng Liang,Ping Chen,De-Gang Zhao,等. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC[J]. Chinese Physics B,2016,25(5):057703. |
| APA | Feng Liang.,Ping Chen.,De-Gang Zhao.,De-Sheng Jiang.,Zhi-Juan Zhao.,...&Guo-Tong Du.(2016).Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC.Chinese Physics B,25(5),057703. |
| MLA | Feng Liang,et al."Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC".Chinese Physics B 25.5(2016):057703. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Observation of posit（333KB） | 限制开放 | License | Application Full Text | |||
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