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Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC
F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
2016
Source PublicationChemical Physics Letters
Volume651Pages:76-79
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27870
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
F. Liang,P. Chen,D.G. Zhao,et al. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC[J]. Chemical Physics Letters,2016,651:76-79.
APA F. Liang.,P. Chen.,D.G. Zhao.,D.S. Jiang.,Z.S. Liu.,...&G.T. Du.(2016).Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC.Chemical Physics Letters,651,76-79.
MLA F. Liang,et al."Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC".Chemical Physics Letters 651(2016):76-79.
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