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Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors
Xiaojing Li; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Lingcong Le; Jing Yang; Xiaoguang He; Liqun Zhang; Shuming Zhang; Jianping Liu; Hui Yang
2016
Source PublicationJournal of Vacuum Science & Technology B
Volume34Issue:1Pages:011204
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27867
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Xiaojing Li,Degang Zhao,Desheng Jiang,et al. Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors[J]. Journal of Vacuum Science & Technology B,2016,34(1):011204.
APA Xiaojing Li.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Jianjun Zhu.,...&Hui Yang.(2016).Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors.Journal of Vacuum Science & Technology B,34(1),011204.
MLA Xiaojing Li,et al."Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors".Journal of Vacuum Science & Technology B 34.1(2016):011204.
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