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Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du
2016
Source PublicationSuperlattices and Microstructures
Volume97Pages:186-192
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27866
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
X. Li,D.G. Zhao,J. Yang,et al. Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells[J]. Superlattices and Microstructures,2016,97:186-192.
APA X. Li.,D.G. Zhao.,J. Yang.,D.S. Jiang.,Z.S. Liu.,...&G.T. Du.(2016).Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells.Superlattices and Microstructures,97,186-192.
MLA X. Li,et al."Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells".Superlattices and Microstructures 97(2016):186-192.
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