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Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang; Y. T. Zhang; G. T. Du
2016
Source PublicationOptics Express
Volume24Issue:13Pages:13824-13831
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27863
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang,D. G. Zhao,D. S. Jiang,et al. Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes[J]. Optics Express,2016,24(13):13824-13831.
APA J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,Z. S. Liu.,...&G. T. Du.(2016).Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes.Optics Express,24(13),13824-13831.
MLA J. Yang,et al."Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes".Optics Express 24.13(2016):13824-13831.
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