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Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; J.P. Liu; L.Q. Zhang; H. Yang; Y.T. Zhang; G.T. Du
2016
Source PublicationJournal of Alloys and Compounds
Volume681Pages:522-526
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27862
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang,D.G. Zhao,D.S. Jiang,et al. Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs[J]. Journal of Alloys and Compounds,2016,681:522-526.
APA J. Yang.,D.G. Zhao.,D.S. Jiang.,P. Chen.,J.J. Zhu.,...&G.T. Du.(2016).Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs.Journal of Alloys and Compounds,681,522-526.
MLA J. Yang,et al."Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs".Journal of Alloys and Compounds 681(2016):522-526.
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