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Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
2016
Source PublicationMaterials Technology
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27861
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
F. Liang,P. Chen,D. G. Zhao,et al. Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD[J]. Materials Technology,2016.
APA F. Liang.,P. Chen.,D. G. Zhao.,D. S. Jiang.,Z. S. Liu.,...&G. T. Du.(2016).Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD.Materials Technology.
MLA F. Liang,et al."Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD".Materials Technology (2016).
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