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Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure
Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li
2016
Source PublicationJournal of Alloys and Compounds
Volume670Pages:258-261
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27859
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Xiaoguang He,Degang Zhao,Wei Liu,et al. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure[J]. Journal of Alloys and Compounds,2016,670:258-261.
APA Xiaoguang He,Degang Zhao,Wei Liu,Jing Yang,Xiaojing Li,&Xiang Li.(2016).Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure.Journal of Alloys and Compounds,670,258-261.
MLA Xiaoguang He,et al."Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure".Journal of Alloys and Compounds 670(2016):258-261.
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