Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure | |
Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li | |
2016 | |
Source Publication | Journal of Alloys and Compounds
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Volume | 670Pages:258-261 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2017-03-10 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27859 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Xiaoguang He,Degang Zhao,Wei Liu,et al. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure[J]. Journal of Alloys and Compounds,2016,670:258-261. |
APA | Xiaoguang He,Degang Zhao,Wei Liu,Jing Yang,Xiaojing Li,&Xiang Li.(2016).Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure.Journal of Alloys and Compounds,670,258-261. |
MLA | Xiaoguang He,et al."Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure".Journal of Alloys and Compounds 670(2016):258-261. |
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Effect_of_GaN_buffer(856KB) | 限制开放 | License | Application Full Text |
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