| Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure | |
| Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li | |
| 2016 | |
| Source Publication | Journal of Alloys and Compounds
 |
| Volume | 670Pages:258-261 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2017-03-10 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27859 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Xiaoguang He,Degang Zhao,Wei Liu,et al. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure[J]. Journal of Alloys and Compounds,2016,670:258-261. |
| APA | Xiaoguang He,Degang Zhao,Wei Liu,Jing Yang,Xiaojing Li,&Xiang Li.(2016).Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure.Journal of Alloys and Compounds,670,258-261. |
| MLA | Xiaoguang He,et al."Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure".Journal of Alloys and Compounds 670(2016):258-261. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Effect_of_GaN_buffer（856KB） | 限制开放 | License | Application Full Text | |||
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