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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
2016
Source PublicationAIP ADVANCES
Volume6Pages:035124
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27856
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
P. Chen,D. G. Zhao,D. S. Jiang,et al. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes[J]. AIP ADVANCES,2016,6:035124.
APA P. Chen.,D. G. Zhao.,D. S. Jiang.,J. J. Zhu.,Z. S. Liu.,...&G. T. Du.(2016).The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes.AIP ADVANCES,6,035124.
MLA P. Chen,et al."The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes".AIP ADVANCES 6(2016):035124.
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