SEMI OpenIR  > 光电子研究发展中心
Researching the silicon direct wafer bonding with interfacial SiO2 layer
Wang Xiaoqing; Yu Yude; Ning Jin
2016
Source PublicationJournal of Semiconductors
Volume37Issue:5Pages:056001
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27853
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Wang Xiaoqing,Yu Yude,Ning Jin. Researching the silicon direct wafer bonding with interfacial SiO2 layer[J]. Journal of Semiconductors,2016,37(5):056001.
APA Wang Xiaoqing,Yu Yude,&Ning Jin.(2016).Researching the silicon direct wafer bonding with interfacial SiO2 layer.Journal of Semiconductors,37(5),056001.
MLA Wang Xiaoqing,et al."Researching the silicon direct wafer bonding with interfacial SiO2 layer".Journal of Semiconductors 37.5(2016):056001.
Files in This Item:
File Name/Size DocType Version Access License
Researching the sili(1723KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wang Xiaoqing]'s Articles
[Yu Yude]'s Articles
[Ning Jin]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wang Xiaoqing]'s Articles
[Yu Yude]'s Articles
[Ning Jin]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wang Xiaoqing]'s Articles
[Yu Yude]'s Articles
[Ning Jin]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.