| Researching the silicon direct wafer bonding with interfacial SiO2 layer | |
| Wang Xiaoqing; Yu Yude; Ning Jin | |
| 2016 | |
| Source Publication | Journal of Semiconductors
 |
| Volume | 37Issue:5Pages:056001 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2017-03-10 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27853 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Wang Xiaoqing,Yu Yude,Ning Jin. Researching the silicon direct wafer bonding with interfacial SiO2 layer[J]. Journal of Semiconductors,2016,37(5):056001. |
| APA | Wang Xiaoqing,Yu Yude,&Ning Jin.(2016).Researching the silicon direct wafer bonding with interfacial SiO2 layer.Journal of Semiconductors,37(5),056001. |
| MLA | Wang Xiaoqing,et al."Researching the silicon direct wafer bonding with interfacial SiO2 layer".Journal of Semiconductors 37.5(2016):056001. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Researching the sili（1723KB） | 限制开放 | License | Application Full Text | |||
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