SEMI OpenIR  > 半导体超晶格国家重点实验室
Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm
Dongwei Jiang; Wei Xiang; Fengyun Guo; Hongyue Hao; Xi Han; Xiaochao Li; Guowei Wang; Yingqiang Xu; Qingjiang Yu; Zhichuan Niu
2016
Source PublicationApplied Physics Letters
Volume108Issue:12Pages:121110
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27829
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Dongwei Jiang,Wei Xiang,Fengyun Guo,et al. Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm[J]. Applied Physics Letters,2016,108(12):121110.
APA Dongwei Jiang.,Wei Xiang.,Fengyun Guo.,Hongyue Hao.,Xi Han.,...&Zhichuan Niu.(2016).Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm.Applied Physics Letters,108(12),121110.
MLA Dongwei Jiang,et al."Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm".Applied Physics Letters 108.12(2016):121110.
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