SEMI OpenIR  > 半导体超晶格国家重点实验室
Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)
Lichun Zhang; XuewenGeng; GuoweiZha; JianxingXu; SihangWei; BenMa; Zesheng Chen; XiangjunShang; HaiqiaoNi; ZhichuanNiu
2016
Source PublicationMaterials Science in Semiconductor Processing
Volume52Pages:68-74
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27824
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Lichun Zhang,XuewenGeng,GuoweiZha,et al. Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)[J]. Materials Science in Semiconductor Processing,2016,52:68-74.
APA Lichun Zhang.,XuewenGeng.,GuoweiZha.,JianxingXu.,SihangWei.,...&ZhichuanNiu.(2016).Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111).Materials Science in Semiconductor Processing,52,68-74.
MLA Lichun Zhang,et al."Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)".Materials Science in Semiconductor Processing 52(2016):68-74.
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