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Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors | |
Y. F. Lao; A. G. U. Perera; H. L. Wang; J. H. Zhao; Y. J. Jin; D. H. Zhang | |
2016 | |
Source Publication | Journal of Applied Physics
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Volume | 119Issue:10Pages:105304 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Date Available | 2017-03-10 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27823 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Y. F. Lao,A. G. U. Perera,H. L. Wang,et al. Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors[J]. Journal of Applied Physics,2016,119(10):105304. |
APA | Y. F. Lao,A. G. U. Perera,H. L. Wang,J. H. Zhao,Y. J. Jin,&D. H. Zhang.(2016).Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors.Journal of Applied Physics,119(10),105304. |
MLA | Y. F. Lao,et al."Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors".Journal of Applied Physics 119.10(2016):105304. |
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Optical characterist(1548KB) | 限制开放 | License | Application Full Text |
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