SEMI OpenIR  > 半导体超晶格国家重点实验室
Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors
Y. F. Lao; A. G. U. Perera; H. L. Wang; J. H. Zhao; Y. J. Jin; D. H. Zhang
2016
Source PublicationJournal of Applied Physics
Volume119Issue:10Pages:105304
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27823
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Y. F. Lao,A. G. U. Perera,H. L. Wang,et al. Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors[J]. Journal of Applied Physics,2016,119(10):105304.
APA Y. F. Lao,A. G. U. Perera,H. L. Wang,J. H. Zhao,Y. J. Jin,&D. H. Zhang.(2016).Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors.Journal of Applied Physics,119(10),105304.
MLA Y. F. Lao,et al."Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors".Journal of Applied Physics 119.10(2016):105304.
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