SEMI OpenIR  > 半导体超晶格国家重点实验室
Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots
Xiang-Jun Shang; Jian-Xing Xu; Ben Ma; Ze-Sheng Chen; Si-Hang Wei; Mi-Feng Li; Guo-Wei Zha; Li-Chun Zhang; Ying Yu; Hai-Qiao Ni; Zhi-Chuan Niu
2016
Source PublicationChinese Physics B
Volume25Issue:10Pages:107805
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27822
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiang-Jun Shang,Jian-Xing Xu,Ben Ma,et al. Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots[J]. Chinese Physics B,2016,25(10):107805.
APA Xiang-Jun Shang.,Jian-Xing Xu.,Ben Ma.,Ze-Sheng Chen.,Si-Hang Wei.,...&Zhi-Chuan Niu.(2016).Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots.Chinese Physics B,25(10),107805.
MLA Xiang-Jun Shang,et al."Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots".Chinese Physics B 25.10(2016):107805.
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