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Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions
Cong Wang; Shengxue Yang; Wenqi Xiong; Congxin Xia; Hui Cai; Bin Chen; Xiaoting Wang; Xinzheng Zhang; Zhongming Wei; Sefaattin Tongay; Jingbo Li; Qian Liu
2016
Source PublicationPhys. Chem. Chem. Phys.
Volume18Issue:40Pages:27750-27753
Subject Area半导体物理
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27788
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Cong Wang,Shengxue Yang,Wenqi Xiong,等. Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions[J]. Phys. Chem. Chem. Phys.,2016,18(40):27750-27753.
APA Cong Wang.,Shengxue Yang.,Wenqi Xiong.,Congxin Xia.,Hui Cai.,...&Qian Liu.(2016).Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions.Phys. Chem. Chem. Phys.,18(40),27750-27753.
MLA Cong Wang,et al."Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions".Phys. Chem. Chem. Phys. 18.40(2016):27750-27753.
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