| Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2p–n heterojunctions | |
| Xiaoting Wang; Le Huang; Yuting Peng; Nengjie Huo; Kedi Wu; Congxin Xia; Zhongming Wei; Sefaattin Tongay; Jingbo Li | |
| 2016 | |
| Source Publication | Nano Research
 |
| Volume | 9Issue:2Pages:507-516 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2017-03-10 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27785 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Xiaoting Wang,Le Huang,Yuting Peng,等. Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2p–n heterojunctions[J]. Nano Research,2016,9(2):507-516. |
| APA | Xiaoting Wang.,Le Huang.,Yuting Peng.,Nengjie Huo.,Kedi Wu.,...&Jingbo Li.(2016).Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2p–n heterojunctions.Nano Research,9(2),507-516. |
| MLA | Xiaoting Wang,et al."Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2p–n heterojunctions".Nano Research 9.2(2016):507-516. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Enhanced rectificati（1863KB） | 限制开放 | License | Application Full Text | |||
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