SEMI OpenIR  > 中科院半导体材料科学重点实验室
Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides
Yongtao Li; Yan Wang; Le Huang; Xiaoting Wang; Xingyun Li; Hui-Xiong Deng; Zhongming Wei; Jingbo Li
2016
Source PublicationACS Appl Mater Interfaces
Volume8Issue:24Pages:15574-15581
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27782
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yongtao Li,Yan Wang,Le Huang,et al. Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides[J]. ACS Appl Mater Interfaces,2016,8(24):15574-15581.
APA Yongtao Li.,Yan Wang.,Le Huang.,Xiaoting Wang.,Xingyun Li.,...&Jingbo Li.(2016).Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides.ACS Appl Mater Interfaces,8(24),15574-15581.
MLA Yongtao Li,et al."Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides".ACS Appl Mater Interfaces 8.24(2016):15574-15581.
Files in This Item:
File Name/Size DocType Version Access License
Anti-ambipolar Field(2291KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Yongtao Li]'s Articles
[Yan Wang]'s Articles
[Le Huang]'s Articles
Baidu academic
Similar articles in Baidu academic
[Yongtao Li]'s Articles
[Yan Wang]'s Articles
[Le Huang]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Yongtao Li]'s Articles
[Yan Wang]'s Articles
[Le Huang]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.