| Chiral tunneling in gated inversion symmetric Weyl semimetal | |
| Chunxu Bai; Yanling Yang; Kai Chang | |
| 2016 | |
| Source Publication | Scientific Reports
 |
| Volume | 6Pages:21283 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2017-03-10 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27767 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Chunxu Bai,Yanling Yang,Kai Chang. Chiral tunneling in gated inversion symmetric Weyl semimetal[J]. Scientific Reports,2016,6:21283. |
| APA | Chunxu Bai,Yanling Yang,&Kai Chang.(2016).Chiral tunneling in gated inversion symmetric Weyl semimetal.Scientific Reports,6,21283. |
| MLA | Chunxu Bai,et al."Chiral tunneling in gated inversion symmetric Weyl semimetal".Scientific Reports 6(2016):21283. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Chiral tunneling in （1600KB） | 限制开放 | License | Application Full Text | |||
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