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Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases
Junda Yan; Quan Wang; Xiaoliang Wang; Chun Feng; Hongling Xiao; Shiming Liu; Jiamin Gong; Fengqi Liu; Baiquan Li
2016
Source PublicationJournal of Applied Physics
Volume120Issue:12Pages:124501
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27764
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Junda Yan,Quan Wang,Xiaoliang Wang,et al. Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases[J]. Journal of Applied Physics,2016,120(12):124501.
APA Junda Yan.,Quan Wang.,Xiaoliang Wang.,Chun Feng.,Hongling Xiao.,...&Baiquan Li.(2016).Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases.Journal of Applied Physics,120(12),124501.
MLA Junda Yan,et al."Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases".Journal of Applied Physics 120.12(2016):124501.
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