SEMI OpenIR  > 中科院半导体材料科学重点实验室
Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs
Wei Li; Quan Wang; Xiangmi Zhan; Junda Yan; Lijuan Jiang; Haibo Yin; Jiamin Gong; Xiaoliang Wang; Fengqi Liu; Baiquan Li; Zhanguo Wang
2016
Source PublicationSemiconductor Science and Technology
Volume31Issue:12Pages:125003
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27761
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wei Li,Quan Wang,Xiangmi Zhan,et al. Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs[J]. Semiconductor Science and Technology,2016,31(12):125003.
APA Wei Li.,Quan Wang.,Xiangmi Zhan.,Junda Yan.,Lijuan Jiang.,...&Zhanguo Wang.(2016).Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs.Semiconductor Science and Technology,31(12),125003.
MLA Wei Li,et al."Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs".Semiconductor Science and Technology 31.12(2016):125003.
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