SEMI OpenIR  > 中科院半导体材料科学重点实验室
Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition
Li-Xin Tian; Feng Zhang; Zhan-Wei Shen; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng
2016
Source PublicationChinese Physics B
Volume25Issue:12Pages:128104
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27755
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li-Xin Tian,Feng Zhang,Zhan-Wei Shen,等. Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition[J]. Chinese Physics B,2016,25(12):128104.
APA Li-Xin Tian.,Feng Zhang.,Zhan-Wei Shen.,Guo-Guo Yan.,Xing-Fang Liu.,...&Yi-Ping Zeng.(2016).Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition.Chinese Physics B,25(12),128104.
MLA Li-Xin Tian,et al."Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition".Chinese Physics B 25.12(2016):128104.
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