SEMI OpenIR  > 中科院半导体材料科学重点实验室
Synthesis of atomic layers of hybridized h-BNC by depositing h-BN on graphene via ion beam sputtering
J. H. Meng; X. W. Zhang; H. Liu; Z. G. Yin; D. G. Wang; Y. Wang; J. B. You; J. L. Wu
2016
Source PublicationApplied Physics Letters
Volume109Issue:17Pages:173106
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27749
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
J. H. Meng,X. W. Zhang,H. Liu,et al. Synthesis of atomic layers of hybridized h-BNC by depositing h-BN on graphene via ion beam sputtering[J]. Applied Physics Letters,2016,109(17):173106.
APA J. H. Meng.,X. W. Zhang.,H. Liu.,Z. G. Yin.,D. G. Wang.,...&J. L. Wu.(2016).Synthesis of atomic layers of hybridized h-BNC by depositing h-BN on graphene via ion beam sputtering.Applied Physics Letters,109(17),173106.
MLA J. H. Meng,et al."Synthesis of atomic layers of hybridized h-BNC by depositing h-BN on graphene via ion beam sputtering".Applied Physics Letters 109.17(2016):173106.
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