SEMI OpenIR  > 中科院半导体材料科学重点实验室
Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer
Jun-Hua Meng; Xin Liu; Xing-Wang Zhang; Yue Zhang; Hao-Lin Wang; Zhi-Gang Yin; Yong-Zhe Zhang; Heng Liu; Jing-Bi You; Hui Yan
2016
Source PublicationNano Energy
Volume28Pages:44-50
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27748
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jun-Hua Meng,Xin Liu,Xing-Wang Zhang,et al. Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer[J]. Nano Energy,2016,28:44-50.
APA Jun-Hua Meng.,Xin Liu.,Xing-Wang Zhang.,Yue Zhang.,Hao-Lin Wang.,...&Hui Yan.(2016).Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer.Nano Energy,28,44-50.
MLA Jun-Hua Meng,et al."Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer".Nano Energy 28(2016):44-50.
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