SEMI OpenIR  > 中科院半导体材料科学重点实验室
Doping of Active Region in Long Wavelength InP Based Transistor Lasers
Lijun Qiao; Song Liang; Hongliang Zhu; Wei Wang
2016
Source PublicationIEEE Photonics Journal
Volume8Issue:3
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27741
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lijun Qiao,Song Liang,Hongliang Zhu,et al. Doping of Active Region in Long Wavelength InP Based Transistor Lasers[J]. IEEE Photonics Journal,2016,8(3).
APA Lijun Qiao,Song Liang,Hongliang Zhu,&Wei Wang.(2016).Doping of Active Region in Long Wavelength InP Based Transistor Lasers.IEEE Photonics Journal,8(3).
MLA Lijun Qiao,et al."Doping of Active Region in Long Wavelength InP Based Transistor Lasers".IEEE Photonics Journal 8.3(2016).
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