SEMI OpenIR  > 中科院半导体材料科学重点实验室
The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs
Xiangting Kong; Renrong Liang; Xuliang Zhou; Shiyan Li; Mengqi Wang; Honggang Liu; Jing Wang; Wei Wang; Jiaoqing Pan
2016
Source PublicationIEEE Transactions on Electron Devices
Volume63Issue:8Pages:3084-3087
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27733
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xiangting Kong,Renrong Liang,Xuliang Zhou,et al. The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs[J]. IEEE Transactions on Electron Devices,2016,63(8):3084-3087.
APA Xiangting Kong.,Renrong Liang.,Xuliang Zhou.,Shiyan Li.,Mengqi Wang.,...&Jiaoqing Pan.(2016).The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs.IEEE Transactions on Electron Devices,63(8),3084-3087.
MLA Xiangting Kong,et al."The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs".IEEE Transactions on Electron Devices 63.8(2016):3084-3087.
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