SEMI OpenIR  > 中科院半导体材料科学重点实验室
Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers
Yanhua Zhang; Wenquan Ma; Jianliang Huang; Yulian Cao; Ke Liu; Wenjun Huang; Chengcheng Zhao; Haiming Ji; Tao Yang
2016
Source PublicationIEEE Electron Device Letters
Volume37Issue:9Pages:1166 - 1169
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27718
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yanhua Zhang,Wenquan Ma,Jianliang Huang,et al. Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers[J]. IEEE Electron Device Letters,2016,37(9):1166 - 1169.
APA Yanhua Zhang.,Wenquan Ma.,Jianliang Huang.,Yulian Cao.,Ke Liu.,...&Tao Yang.(2016).Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers.IEEE Electron Device Letters,37(9),1166 - 1169.
MLA Yanhua Zhang,et al."Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers".IEEE Electron Device Letters 37.9(2016):1166 - 1169.
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