SEMI OpenIR  > 中科院半导体材料科学重点实验室
Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells
Ya-Li Liu; Peng Jin; Gui-Peng Liu; Wei-Ying Wang; Zhi-Qiang Qi; Chang-Qing Chen; Zhan-Guo Wang
2016
Source PublicationChinese Physics B
Volume25Issue:8Pages:1
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27689
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ya-Li Liu,Peng Jin,Gui-Peng Liu,等. Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells[J]. Chinese Physics B,2016,25(8):1.
APA Ya-Li Liu.,Peng Jin.,Gui-Peng Liu.,Wei-Ying Wang.,Zhi-Qiang Qi.,...&Zhan-Guo Wang.(2016).Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells.Chinese Physics B,25(8),1.
MLA Ya-Li Liu,et al."Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells".Chinese Physics B 25.8(2016):1.
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