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A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers
Guipeng Liu; WenjieChen; LinshengLiu; PengJin; YonghuiTian; JianhongYang
2016
Source PublicationOptics Communications
Volume374Pages:114-118
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27688
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Guipeng Liu,WenjieChen,LinshengLiu,et al. A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers[J]. Optics Communications,2016,374:114-118.
APA Guipeng Liu,WenjieChen,LinshengLiu,PengJin,YonghuiTian,&JianhongYang.(2016).A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers.Optics Communications,374,114-118.
MLA Guipeng Liu,et al."A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers".Optics Communications 374(2016):114-118.
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