SEMI OpenIR  > 中科院半导体材料科学重点实验室
Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires
Xianghai Ji; Xiaoguang Yang; Wenna Du; Huayong Pan; Tao Yang
2016
Source PublicationNano Letters
Volume16Issue:12Pages:7580-7587
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27684
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xianghai Ji,Xiaoguang Yang,Wenna Du,et al. Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires[J]. Nano Letters,2016,16(12):7580-7587.
APA Xianghai Ji,Xiaoguang Yang,Wenna Du,Huayong Pan,&Tao Yang.(2016).Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires.Nano Letters,16(12),7580-7587.
MLA Xianghai Ji,et al."Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires".Nano Letters 16.12(2016):7580-7587.
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