SEMI OpenIR  > 中科院半导体材料科学重点实验室
InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition
Xianghai Ji; Xiaoguang Yang; Wenna Du; Huayong Pan; Shuai Luo; Haiming Ji; H Q Xu; Tao Yang
2016
Source PublicationNanotechnology
Volume27Issue:27Pages:275601
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27683
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xianghai Ji,Xiaoguang Yang,Wenna Du,et al. InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition[J]. Nanotechnology,2016,27(27):275601.
APA Xianghai Ji.,Xiaoguang Yang.,Wenna Du.,Huayong Pan.,Shuai Luo.,...&Tao Yang.(2016).InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition.Nanotechnology,27(27),275601.
MLA Xianghai Ji,et al."InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition".Nanotechnology 27.27(2016):275601.
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