SEMI OpenIR  > 中科院半导体材料科学重点实验室
Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers
Feng Gao; Shuai Luo; Haiming Ji; Songtao Liu; Feng Xu; Zun-Ren Lv; Dan Lu; Chen Ji; Tao Yang
2016
Source PublicationIEEE Photonics Technology Letters
Volume28Issue:13Pages:1481-1484
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27680
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Feng Gao,Shuai Luo,Haiming Ji,et al. Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers[J]. IEEE Photonics Technology Letters,2016,28(13):1481-1484.
APA Feng Gao.,Shuai Luo.,Haiming Ji.,Songtao Liu.,Feng Xu.,...&Tao Yang.(2016).Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers.IEEE Photonics Technology Letters,28(13),1481-1484.
MLA Feng Gao,et al."Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers".IEEE Photonics Technology Letters 28.13(2016):1481-1484.
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