Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts | |
Wenna Du; Xiaoguang Yang; Huayong Pan; Xianghai Ji; Haiming Ji; Shuai Luo; Xingwang Zhang; Zhanguo Wang; Tao Yang | |
2016 | |
Source Publication | Nano Lett.
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Volume | 16Issue:2Pages:877-882 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2017-03-10 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/27677 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Wenna Du,Xiaoguang Yang,Huayong Pan,et al. Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts[J]. Nano Lett.,2016,16(2):877-882. |
APA | Wenna Du.,Xiaoguang Yang.,Huayong Pan.,Xianghai Ji.,Haiming Ji.,...&Tao Yang.(2016).Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts.Nano Lett.,16(2),877-882. |
MLA | Wenna Du,et al."Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts".Nano Lett. 16.2(2016):877-882. |
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Controlled-Direction(3148KB) | 限制开放 | License | Application Full Text |
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