SEMI OpenIR  > 中科院半导体材料科学重点实验室
Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
Jinling Yu; Xiaolin Zeng; Shuying Cheng; Yonghai Chen; Yu Liu; Yunfeng Lai; Qiao Zheng; Jun Ren
2016
Source PublicationNanoscale Res Lett
Volume11Issue:1Pages:477
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27676
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jinling Yu,Xiaolin Zeng,Shuying Cheng,et al. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells[J]. Nanoscale Res Lett,2016,11(1):477.
APA Jinling Yu.,Xiaolin Zeng.,Shuying Cheng.,Yonghai Chen.,Yu Liu.,...&Jun Ren.(2016).Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.Nanoscale Res Lett,11(1),477.
MLA Jinling Yu,et al."Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells".Nanoscale Res Lett 11.1(2016):477.
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