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Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells
Jinling Yuabd; Shuying Chengbd; Yunfeng Laib; Qiao Zhengb; Yonghai Chenc; Jun Rena
2016
Source PublicationPhysica E: Low-dimensional Systems and Nanostructures
Volume81Pages:240-247
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27675
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jinling Yuabd,Shuying Chengbd,Yunfeng Laib,et al. Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells[J]. Physica E: Low-dimensional Systems and Nanostructures,2016,81:240-247.
APA Jinling Yuabd,Shuying Chengbd,Yunfeng Laib,Qiao Zhengb,Yonghai Chenc,&Jun Rena.(2016).Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells.Physica E: Low-dimensional Systems and Nanostructures,81,240-247.
MLA Jinling Yuabd,et al."Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells".Physica E: Low-dimensional Systems and Nanostructures 81(2016):240-247.
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