SEMI OpenIR  > 光电子器件国家工程中心
Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress
Yao Nan; Li Wei†; Zhao Yihao; Zhong Li; Liu Suping; Ma Xiaoyu
2016
Source PublicationSPIE Proceedings
Volume9671Pages:96710H-3
Subject Area半导体器件
Indexed BySCI
Date Available2017-03-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27672
Collection光电子器件国家工程中心
Recommended Citation
GB/T 7714
Yao Nan,Li Wei†,Zhao Yihao,et al. Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress[J]. SPIE Proceedings,2016,9671:96710H-3.
APA Yao Nan,Li Wei†,Zhao Yihao,Zhong Li,Liu Suping,&Ma Xiaoyu.(2016).Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress.SPIE Proceedings,9671,96710H-3.
MLA Yao Nan,et al."Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress".SPIE Proceedings 9671(2016):96710H-3.
Files in This Item:
File Name/Size DocType Version Access License
Life prediction of 8(553KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Yao Nan]'s Articles
[Li Wei†]'s Articles
[Zhao Yihao]'s Articles
Baidu academic
Similar articles in Baidu academic
[Yao Nan]'s Articles
[Li Wei†]'s Articles
[Zhao Yihao]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Yao Nan]'s Articles
[Li Wei†]'s Articles
[Zhao Yihao]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.