SEMI OpenIR  > 中科院半导体材料科学重点实验室
碳化硅中间带太阳电池及其制备方法
王科范; 张光彪; 丁丽; 刘孔; 曲胜春; 王占国
Rights Holder中国科学院半导体所
Date Available2016-09-29
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-11-04
Application NumberCN201410612819.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27651
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
王科范,张光彪,丁丽,等. 碳化硅中间带太阳电池及其制备方法.
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碳化硅中间带太阳电池及其制备方法.pdf(450KB) 限制开放LicenseApplication Full Text
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