SEMI OpenIR  > 中科院半导体材料科学重点实验室
一种高反射率的垂直结构发光二级管芯片及其制备方法
赵桂娟; 汪连山; 杨少延; 刘贵鹏; 魏鸿源; 焦春美; 刘祥林; 朱勤生; 王占国
Rights Holder中国科学院半导体所
Date Available2016-09-29
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-11-06
Application NumberCN201410641928.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27648
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
赵桂娟,汪连山,杨少延,等. 一种高反射率的垂直结构发光二级管芯片及其制备方法.
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一种高反射率的垂直结构发光二级管芯片及其(533KB) 限制开放LicenseApplication Full Text
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