SEMI OpenIR  > 中科院半导体材料科学重点实验室
用于碳化硅生长的高温装置及方法
刘兴昉; 刘斌; 闫果果; 刘胜北; 田丽欣; 申占伟; 王雷; 赵万顺; 张峰; 孙国胜; 曾一平
Rights Holder中国科学院半导体所
Date Available2016-09-28
Country中国
Subtype发明
Subject Area半导体材料
Application Date2015-01-08
Application NumberCN201510008972.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27619
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
刘兴昉,刘斌,闫果果,等. 用于碳化硅生长的高温装置及方法.
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用于碳化硅生长的高温装置及方法.pdf(600KB) 限制开放LicenseApplication Full Text
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