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一种去除碳化硅等离子体刻蚀形成的刻蚀损伤层的方法
刘胜北; 何志; 刘斌; 刘兴昉; 杨香; 樊中朝; 王晓峰; 王晓东; 赵永梅; 杨富华; 孙国胜; 曾一平
Rights Holder中国科学院半导体所
Date Available2016-09-28
Country中国
Subtype发明
Subject Area半导体材料
Application Date2015-01-22
Application NumberCN201510032621.2
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27604
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
刘胜北,何志,刘斌,等. 一种去除碳化硅等离子体刻蚀形成的刻蚀损伤层的方法.
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一种去除碳化硅等离子体刻蚀形成的刻蚀损伤(568KB) 限制开放LicenseApplication Full Text
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