SEMI OpenIR  > 光电子研究发展中心
碳化硅衬底上的AlN冷阴极结构
陈平; 赵德刚; 朱建军; 刘宗顺; 江德生; 杨辉
Rights Holder中国科学院半导体所
Date Available2016-09-28
Country中国
Subtype发明
Subject Area光电子学
Application Date2015-03-03
Application NumberCN201510094613.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27583
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
陈平,赵德刚,朱建军,等. 碳化硅衬底上的AlN冷阴极结构.
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