低偏角碳化硅同质外延材料的制作方法 | |
闫果果; 孙国胜; 张峰; 刘兴昉; 王雷; 赵万顺; 曾一平 | |
Rights Holder | 中国科学院半导体所 |
Date Available | 2016-09-28 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体材料 |
Application Date | 2015-04-16 |
Application Number | CN201510180960.5 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/27564 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | 闫果果,孙国胜,张峰,等. 低偏角碳化硅同质外延材料的制作方法. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
低偏角碳化硅同质外延材料的制作方法.pd(505KB) | 限制开放 | License | Application Full Text |
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