SEMI OpenIR  > 中科院半导体材料科学重点实验室
低偏角碳化硅同质外延材料的制作方法
闫果果; 孙国胜; 张峰; 刘兴昉; 王雷; 赵万顺; 曾一平
Rights Holder中国科学院半导体所
Date Available2016-09-28
Country中国
Subtype发明
Subject Area半导体材料
Application Date2015-04-16
Application NumberCN201510180960.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27564
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
闫果果,孙国胜,张峰,等. 低偏角碳化硅同质外延材料的制作方法.
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低偏角碳化硅同质外延材料的制作方法.pd(505KB) 限制开放LicenseApplication Full Text
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