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基于SOI衬底的单杂质原子无结硅纳米线晶体管及制备方法
王昊; 韩伟华; 杨富华
Rights Holder中国科学院半导体所
Date Available2016-09-28
Country中国
Subtype发明
Subject Area微电子学
Application Date2015-04-22
Application NumberCN201510192461.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27560
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
王昊,韩伟华,杨富华. 基于SOI衬底的单杂质原子无结硅纳米线晶体管及制备方法.
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