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无掺杂剂的AlGaN基紫外发光二极管及制备方法
张连; 张韵; 王军喜; 李晋闽
Rights Holder中国科学院半导体所
Date Available2016-09-22
Country中国
Subtype发明
Subject Area半导体器件
Application Date2015-06-08
Application NumberCN201510308850.2
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27550
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
张连,张韵,王军喜,等. 无掺杂剂的AlGaN基紫外发光二极管及制备方法.
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