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一种具有低折射率材料的LED图形化衬底的制备方法
张勇辉; 魏同波; 王军喜; 李晋闽
Rights Holder中国科学院半导体所
Date Available2016-09-22
Country中国
Subtype发明
Subject Area半导体器件
Application Date2014-10-27
Application NumberCN201410584703.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27529
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
张勇辉,魏同波,王军喜,等. 一种具有低折射率材料的LED图形化衬底的制备方法.
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