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具有亚波长光栅结构的面入射硅基锗光电探测器及其制备方法
刘智; 成步文; 何超; 李传波; 薛春来; 王启明
Rights Holder中国科学院半导体所
Date Available2016-09-22
Country中国
Subtype发明
Subject Area光电子学
Application Date2015-07-07
Application NumberCN201510394479.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27500
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
刘智,成步文,何超,等. 具有亚波长光栅结构的面入射硅基锗光电探测器及其制备方法.
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