| SOI叉指结构衬底Ⅲ-Ⅴ族材料沟道薄膜晶体管及制备方法 | |
| 吕奇峰; 韩伟华; 洪文婷; 杨富华 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-22 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 微电子学 |
| Application Date | 2015-07-22 |
| Application Number | CN201510433864.7 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27492 |
| Collection | 半导体集成技术工程研究中心 |
| Recommended Citation GB/T 7714 | 吕奇峰,韩伟华,洪文婷,等. SOI叉指结构衬底Ⅲ-Ⅴ族材料沟道薄膜晶体管及制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| SOI叉指结构衬底Ⅲ-Ⅴ族材料沟道薄膜晶（526KB） | 限制开放 | License | Application Full Text | |||
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