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SOI叉指结构衬底Ⅲ-Ⅴ族材料沟道薄膜晶体管及制备方法
吕奇峰; 韩伟华; 洪文婷; 杨富华
Rights Holder中国科学院半导体所
Date Available2016-09-22
Country中国
Subtype发明
Subject Area微电子学
Application Date2015-07-22
Application NumberCN201510433864.7
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27492
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
吕奇峰,韩伟华,洪文婷,等. SOI叉指结构衬底Ⅲ-Ⅴ族材料沟道薄膜晶体管及制备方法.
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SOI叉指结构衬底Ⅲ-Ⅴ族材料沟道薄膜晶(526KB) 限制开放LicenseApplication Full Text
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