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Si衬底上GaN薄膜的生长方法及复合GaN薄膜
刘波亭; 马平; 郭仕宽; 甄爱功; 张烁; 吴冬雪; 王军喜; 李晋闽
Rights Holder中国科学院半导体所
Date Available2016-09-22
Country中国
Subtype发明
Subject Area半导体器件
Application Date2015-08-17
Application NumberCN201510504913.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27477
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
刘波亭,马平,郭仕宽,等. Si衬底上GaN薄膜的生长方法及复合GaN薄膜.
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