SEMI OpenIR  > 中科院半导体照明研发中心
具有氮化镓系高阻层的HEMT及制备方法
张烁; 马平; 郭仕宽; 刘波亭; 李晋闽; 王军喜
Rights Holder中国科学院半导体所
Date Available2016-09-22
Country中国
Subtype发明
Subject Area半导体器件
Application Date2014-12-17
Application NumberCN201410785415.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27471
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
张烁,马平,郭仕宽,等. 具有氮化镓系高阻层的HEMT及制备方法.
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