| 一种高响应度雪崩光电二极管制备方法 | |
| 陈良惠; 李慧梅; 李晓敏; 李健; 于海龙; 宋国峰; 徐云 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-12 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2015-08-31 |
| Application Number | CN201510547504.X |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27430 |
| Collection | 纳米光电子实验室 |
| Recommended Citation GB/T 7714 | 陈良惠,李慧梅,李晓敏,等. 一种高响应度雪崩光电二极管制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 一种高响应度雪崩光电二极管制备方法.pd（861KB） | 限制开放 | License | Application Full Text | |||
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