SEMI OpenIR  > 半导体超晶格国家重点实验室
立式III-V族锑化物半导体单晶薄膜的制备方法
潘东; 赵建华
Rights Holder中国科学院半导体所
Date Available2016-09-12
Country中国
Subtype发明
Subject Area半导体物理
Application Date2015-11-10
Application NumberCN201510763100.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27415
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
潘东,赵建华. 立式III-V族锑化物半导体单晶薄膜的制备方法.
Files in This Item:
File Name/Size DocType Version Access License
立式III-V族锑化物半导体单晶薄膜的制(395KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[潘东]'s Articles
[赵建华]'s Articles
Baidu academic
Similar articles in Baidu academic
[潘东]'s Articles
[赵建华]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[潘东]'s Articles
[赵建华]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.