Knowledge Management System Of Institute of Semiconductors,CAS
| 立式III-V族锑化物半导体单晶薄膜的制备方法 | |
| 潘东; 赵建华 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-12 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体物理 |
| Application Date | 2015-11-10 |
| Application Number | CN201510763100.4 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27415 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | 潘东,赵建华. 立式III-V族锑化物半导体单晶薄膜的制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 立式III-V族锑化物半导体单晶薄膜的制（395KB） | 限制开放 | License | Application Full Text | |||
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