Knowledge Management System Of Institute of Semiconductors,CAS
立式III-V族锑化物半导体单晶薄膜的制备方法 | |
潘东; 赵建华 | |
Rights Holder | 中国科学院半导体所 |
Date Available | 2016-09-12 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体物理 |
Application Date | 2015-11-10 |
Application Number | CN201510763100.4 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/27415 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | 潘东,赵建华. 立式III-V族锑化物半导体单晶薄膜的制备方法. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
立式III-V族锑化物半导体单晶薄膜的制(395KB) | 限制开放 | License | Application Full Text |
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